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GaN power electronics for bidirectional, single-phase DC electric vehicle charging
Researchers at the Fraunhofer Institute for Applied Solid State Physics IAF have developed a gallium nitride (GaN)-based power electronics module for 800-volt bidirectional direct current (DC) charging systems. The module is part of the GaN4EmoBiL project ("GaN Power Semiconductors for Electric Mobility and System Integration via Bidirectional Charging"). Project partner Ambibox GmbH integrated the module into the demonstrator of a bidirectional, single-phase off-board charger for electric vehicles (EVs).
The Fraunhofer IAF module uses 1,200-volt GaN devices fabricated on an insulating substrate. The superior properties of the devices are to be evaluated through their use in the demonstrator with battery voltages ranging from 150 volts to a maximum of 920 volts. The successful development underscores the enormous potential that GaN-based power electronics hold for the future of electric mobility.
Bidirectional, single-phase 800-volt DC charger for 3 kilowatts of power..."The single-phase demonstrator of an off-board EV charger with up to 3 kilowatts of bidirectional power addresses an existing gap in the trade-off between cost, flexibility, efficiency and compactness for bidirectional charging," explains Jun.-Prof. Dr. Stefan Mönch, coordinator of the GaN4EmoBiL project.
Currently, electric vehicles are equipped with permanently installed onboard chargers to convert the alternating current (AC) from a household outlet or public charging station into the direct current (DC) required by the electric car, for example, at a power level of 11 or 22 kilowatts for fast charging.
However, onboard chargers incur high costs due to their size, weight and technical complexity. The off-board charger developed in GaN4EmoBiL represents a significantly more affordable and flexible alternative: Although its 3-kilowatt power output results in a slower charging speed compared with onboard charging systems, it is mobile, much more compact, lighter and versatile thanks to its CCS (Combined Charging System) plug and Schuko plug.
The demonstrator has a total volume of 8.3 liters (about 8.8 quarts) and a total weight, including plugs, of 5.7 kilograms (about 12.6 pounds).
Another advantage is its bidirectional charging capability.
"Bidirectional charging at high reverse voltages, as enabled by the demonstrated GaN charging system, is a key pillar in making the energy system more flexible," emphasizes Achim Lösch, business developer for high-frequency and power electronics at Fraunhofer IAF.
Through bidirectional charging, an electric car can function not only as a means of transportation but also as an energy storage device. During periods of oversupply, it draws power from the grid; during peak loads, it feeds power back into the grid.
GaN power electronics for energy technology: Fraunhofer IAF at PCIM Expo & Conference 2026..."At Fraunhofer IAF, we are developing innovative GaN devices and integrated power circuits (GaN power ICs) that are not only efficient but also significantly advance miniaturization at the system level through functional integration," explains Dr. Michael Basler, a researcher in the field of GaN power electronics at Fraunhofer IAF.
"At the same time, we are advancing the scalability of these technologies in terms of voltage class, current-carrying capacity and wafer size. Our goal: wide-bandgap performance at silicon prices."
Fraunhofer IAF will provide an overview of its research and development activities in the field of GaN power electronics at this year's PCIM Expo & Conference, which takes place June 9–11, 2026, in Nuremberg and focuses on the topic "Power Electronics for Energy Technology."
At the exhibition, Fraunhofer IAF will showcase various GaN-based power electronic components and modules at Booth 260 in Hall 6—with the highlight being the bidirectional EV charging system demonstrator. During the conference, four researchers from Fraunhofer IAF will present their current work in lectures and poster sessions.
Of particular note is the keynote presentation by Dr. Michael Basler on June 9 at 9:45 a.m.: "The GaN Evolution: Lateral, Vertical, and Bidirectional—What's Next?" This year, the presentation will open the PCIM Conference.
In it, Basler will provide an overview of the development of GaN transistors for power electronics to date, explain their advantages and look ahead to upcoming innovations.
GaN power electronics for the All-Electric Society...One of the key technological requirements of the All-Electric Society is the continuous development of increasingly powerful and efficient power electronics—particularly in energy conversion and storage systems.
In these applications, power electronic components represent a bottleneck: The maximum voltage a converter can handle is typically determined by the breakdown voltage of the semiconductors used, thereby defining a critical system limit. Accordingly, the performance of these components is decisive for the performance of the entire system.
Due to its physical properties, GaN enables significant advances in power electronics for energy conversion applications. GaN-based components enable the development of faster, more compact and more efficient systems.
In the field of electromobility, GaN opens the door to the use of power electronics in voltage classes up to 1,200 volts and, in the future, up to 1,700 volts, thanks to its combination of performance, efficiency and reduced costs.
Such high-performance systems have a positive impact on both the range of electric vehicles and their cost-effectiveness. They help further establish electric mobility across a broader segment of society.
Provided by Fraunhofer Institute for Applied Solid State Physics IAF
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